Reactive ion etching (RIE) is a plasma process where radiofrequency (RF) discharge-excited species (radicals, ions) etch substrate or thin films in a low-pressure chamber. RIE is a synergistic process between chemically active species and energetic ion bombardment.

2023年4月11日 · Reactive Ion Etching (RIE) is a dry etching technique widely used in semiconductor manufacturing, MEMS fabrication, microfabrication and nanotechnology to create patterns on the surface of various materials with high resolution and anisotropy.

2025年1月7日 · Reactive ion etching (RIE) is a high resolution mechanism for etching materials using reactive gas discharges. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals.

Reactive ion etching (RIE) is a type of plasma etch technology used in specialty semiconductor markets for device manufacturing. Chemically reactive species (ions) are accelerated toward the substrate (usually a silicon wafer), to remove a specific deposited material.

This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials. Keywords: reactive ion etching, high-aspect ratio etching, inductively-coupled plasma etching, micromachining, MEMS, NEMS. 1. Background

2020年1月1日 · Reactive ion etching (RIE), also known as plasma etching or dry etching, and its extension deep RIE (DRIE) are processes that combine physical and chemicals effects to remove material from the wafer surface.

Reactive Ion Etching (RIE) combines chemical reactions and physical ion bombardment to etch nanoscale features with high precision, enabling the fabrication of integrated circuits, MEMS, and photonic devices.

The reactive ion etching is an ion-assisted reactive etching process. Because of the good controllability of the etching behavior (homogeneity, etch rate, etch profile, selectivity), RIE is a method for the production of topographical structures for micro- and nanosystem technology.

Reactive ion etchers are parallel plate, capacitively coupled plasma etchers wherein the substrate sits on the powered electrode. An RF power, in most cases at 13.56MHz, is applied to the powered electrode. The powered electrode area is typically smaller than …

2014年5月8日 · In this paper, general aspects of the reactive ion etching (RIE) technique will be described, such as anisotropy, loading effect, lag effect, RIE chemistries and micro-masking, followed by a brief overview of etching dielectrics (SiO x, SiN x) and crystalline Si.