反应离子蝕刻（英文：Reactive-Ion Etching，或简写为RIE）是一种半导体生产加工工艺，它利用由等离子体强化后的反应离子气体轰击目标材料，来达到刻蚀的目的。

Reactive Ion Etching 反应离子蚀刻. 反应离子蚀刻（以下简称RIE）使用了化学和物理反应来移除衬底表面的材料,它是能产生定向蚀刻的最基本工艺. 高度各向异性的 蚀刻工艺 能够通过RIE中伴随等离子化学反应蚀刻同时发生的带能离子轰击获得

2020年12月10日 · 刻蚀采用的等离子体源常见的 有容性耦合等离子体 (CCP-capacitively coupled plasma)、感应耦合等离子体ICP (Inductively coupled plasma)和 微波ECR 等离子体 (microwave electron cyclotron resonance plasma) 等。 虽然等离子体刻蚀设备已广泛应用于集成电路制造，但由于等离子体刻蚀过程中复杂的物理和化学过程到目前为止仍没有一个有效的方法完全从理论上模拟和分析等离子体刻蚀过程。 除刻蚀外， 等离子体技术 也成功的应用于其他半导体制程，如 …

2021年8月20日 · This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

2020年1月1日 · Reactive ion etching (RIE), also known as plasma etching or dry etching, and its extension deep RIE (DRIE) are processes that combine physical and chemicals effects to remove material from the wafer surface.

This chapter reviews the foundational technology of the two principal ion beam etch methods, reactive-ion-beam etching (RIBE) and chemically assisted ion-beam etching (CAIBE), and their application to etching of compound semiconductors.

Reactive ion etching (RIE) is a plasma process where radiofrequency (RF) discharge-excited species (radicals, ions) etch substrate or thin films in a low-pressure chamber. RIE is a synergistic process between chemically active species and energetic ion bombardment.

Ion beam etching (IBE) is an important technology for patterning of nonvolatile and chemically sensitive materials. The etching rate is a function of the ion flux, the sputtering yield, and the density of the material. The design of IBE grids with good ion flux and divergence uniformity is considered an art.

2021年4月28日 · In reactive ion etching (RIE), many species such as neutrals, radicals, ions, electrons, and photons impact the surface simultaneously and continuously. This chapter introduces mechanisms that are unique to RIE.

2021年4月28日 · Ion beam etching (IBE) is an important technology for patterning of nonvolatile and chemically sensitive materials. The etching rate is a function of the ion flux, the sputtering yield, and the density of the material. The design of IBE grids with good ion flux and divergence uniformity is considered an art.