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10 小时之前 · TDK has introduced Class-X2 EMI suppression capacitors that are 20% smaller and more humidity resistant than its previous offerings. Called B3292x, the series meets Grade III Test B for temperature, humidity and bias, and range from 18 x 5 x 10.5mm to 42 x 14 x 25mm as values increase from 0.1 to ...

iC-Haus has created a high-speed sine-to-digital signal conditioning interpolation IC for magnetic or optical position sensors. “Linear scales and angular sensors can benefit from higher resolution and accuracy, enabling an outstanding measurement precision, a faster motion speed or an improved control quality for drives,” claimed the company.

4 天之前 · “GPUs and AI processors used in datacentre applications (servers and accelerator cards) were the key drivers for the chip sector in 2024,” says Gartner vo George Brocklehurst, “the rising demand for AI and generative AI (GenAI) workloads led datacentres to become the second-largest market for semiconductors in 2024, behind smartphones. Datacentre semiconductor revenue totalled $112 ...

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14 小时之前 · OpenAI will tape-out its first chip on TSMC 3nm later this year, reports Reuters, with the intention of putting it into volume production in 2026. The chip will be used for both training and inference. It has been designed by an in-house team of 40 people led by Richard Ho. The team is working in ...

2025年1月13日 · Raspberry Pi 5 gets bigger, better and pricier – the new version of Pi5 is built using the RP1 I/O controller, has up to 16GB of RAM and costs $120. The new Pi5 uses the Broadcom BCM2712 2.4GHz quad-core 64-bit Arm Cortex-A76 CPU, with cryptography extensions, 512KB per-core L2 caches and a 2MB ...

2025年1月14日 · Towards these triple goals, Fraunhofer Institute for Photonic Microsystems (IPMS) has developed a novel way to stack OLEDs “introducing a highly efficient monochrome OLED microdisplay with a brightness of over 70,000 nits [70,000cd/m 2]”, it said.“The OLED stack used even achieves over 200,000 nits on reference substrates.”

2025年1月14日 · Imec has demonstrated electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line. Achieving room-temperature continuous-wave lasing with threshold currents as low as 5 mA and output powers ...