Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field.

Reactive Ion Etching 反应离子蚀刻. 反应离子蚀刻（以下简称RIE）使用了化学和物理反应来移除衬底表面的材料,它是能产生定向蚀刻的最基本工艺. 高度各向异性的 蚀刻工艺 能够通过RIE中伴随等离子化学反应蚀刻同时发生的带能离子轰击获得

反应性离子刻蚀 （reaction ionetching；RIE）是制作 半导体集成电路 的蚀刻工艺之一。 在除去不需要的 集成电路板 上的保护膜时，利用反应性气体的离子束，切断保护膜物质的化学键，使之产生低分子物质，挥发或游离出板面，这样的方法称为反应性离子刻蚀。 离子刻蚀是利用高能量 惰性气体 离子轰击被刻蚀物体的表面，达到溅射 刻蚀 的作用。 因为采用这种方法，所以可以得到非常小的特征尺寸和垂直的侧壁形貌。 这是一种“通用”的刻蚀方式，可以在任何材料上形成图形 …

2025年1月7日 · Reactive ion etching (RIE) is a high resolution mechanism for etching materials using reactive gas discharges. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals.

2021年8月20日 · The ability to etch very deep and high-aspect features into fused silica, quartz and glasses using a reactive ion etching process has been recently reported [20,71,72,73,74,75]. Pedersen and Huff reported an extensive design of experiments (DOE) by varying the most important etch process parameters over a range of values, subsequently ...

2023年4月11日 · Reactive Ion Etching (RIE) is a dry etching technique widely used in semiconductor manufacturing, MEMS fabrication, microfabrication and nanotechnology to create patterns on the surface of various materials with high resolution and anisotropy.

In this article, we will discover the fundamental principles and applications of reactive ion etching and how it contrasts with other etching techniques like plasma etching. RIE is an etching method, known for its precision, control, and ability to create complex micro- and nano-structures essential in today’s electronic devices.

Reactive ion etching (RIE) is a type of plasma etch technology used in specialty semiconductor markets for device manufacturing. Chemically reactive species (ions) are accelerated toward the substrate (usually a silicon wafer), to remove a specific deposited material.

Reactive ion etching (RIE) is a plasma process where radiofrequency (RF) discharge-excited species (radicals, ions) etch substrate or thin films in a low-pressure chamber. RIE is a synergistic process between chemically active species and energetic ion bombardment.

1984年1月1日 · This chapter discusses reactive ion etching. The radicals and neutrals participate in chemical reactions on the film surface to produce volatile species or their precursors, while positive ions are accelerated across the plasma sheath in the inter-electrode space and bombard wafer surfaces on the cathode to initiate or complete the ...