资讯

This letter presents a dual-band complementary metal–oxide–semiconductor (CMOS) low-noise amplifier (LNA) for fifth-generation (5G) new radio (NR) frequency range 2 (FR2) applications. The proposed ...
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In this work, MEMS capacitive mirror structure was developed. CVD Amorphous Silicon (α-Si) was used as sacrificial layer. Because of higher reflectance and CMOS compatible consideration, α-Si was used ...