although it is dopable and the magnetism has a large influence on the optical properties. Figure 4: Schematic structure of a MOSFET (left) and a spin-FET (right).

Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, ...

Quantum Innovation Centre (Q. InC), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore Institute of Materials Research and ...

In a newly published paper, the team presents a 2D gate-all-around (GAA) transistor that they claim ... Just because something works in a lab doesn't mean it will scale to millions of wafers ...