资讯

IEEE17 小时
Dual-Band CMOS Low-Noise Amplifier Employing Transformer-Based Band ... - IEEE Xplore
This letter presents a dual-band complementary metal–oxide–semiconductor (CMOS) low-noise amplifier (LNA) for fifth-generation (5G) new radio (NR) frequency range 2 (FR2) applications. The proposed ...
IEEE6 天
Development of MEMS Capacitive Mirror Structure with CMOS Compatible Process - IEEE Xplore
In this work, MEMS capacitive mirror structure was developed. CVD Amorphous Silicon (α-Si) was used as sacrificial layer. Because of higher reflectance and CMOS compatible consideration, α-Si was used ...