SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

The MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV ...

Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

The inverters use a silicon carbide metal-oxide-semiconductor field-effect transistor for high power conversion capability.

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

In recent years, the worldwide silicon carbide (SiC) and other compound semiconductors market has been hit by increased production capacity inside China's supply chain, leading to unsustainable price ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

The US has initiated a Section 301 investigation into China's mature semiconductor processes and third-generation silicon ...

RFMW, part of Exponential Technology Group, Inc., a premier distributor of power management and RF and microwave components ...